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MBE Growth of Alinn and Bi2se3 Thin Films and Hetero-Structures read online

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This treatise, "MBE Growth of AlInN and Bi2Se3 Thin Films and Hetero-constructions" by Ziyan, Wang, 王子砚, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Mess halls: Ascription 3. 0 Hong Kong License. The content of this treatise has not been altered in any thataway. We have altered the formatting in order to facilitate the meliorate of type-setting and book-learning of the treatise. All freedoms not granted by the above license are retained by the playwright. Abstract:  Molecular Beam Epitaxy is an advanced method for the synthesis of single-crystal thin-photograph constructions. However, the growth behavior varies case by case due to the complicated kinetic outgrowth. In this thesis, the epitaxial growth channel of AlxIn1-xN alloy and Bi2Se3 thin-films are studied. Heteroepitaxial growth of AlxIn1-xN alloy on GaN(0001) substrate is carried out in the Nitrogen-rich flux circumstance. A series of transient growth executes are identified from the initiation of the unfrocking. A significant effect of source beam-flux on the unification rate of Indium atoms is observed and measured. A interaction between the unification rate and the growth circumstance (flux ratio and growth heat) is revealed by the dependence of the growth-rate of the photograph on beam fluxes. A mathematic model is then suggested to explain the effect, through which the measured comes out indicating a surface diffusing and trapping outgrowth is indicated. Unexpected behavior of the lattice-parameter transformation of the growth facade during unfrocking is also observed, indicating a complex tension-requiescence outgrowth of the epilayers. For three-dimensional (3D) topological insulator of Bi2Se3, uppings are attempted on various substrate surfaces, including clean Si(111)-(7x7), Hydrogen terminated Si(111), Bismuth induced Si(111) reconstructed surfaces, GaN(0001), and some selenide "psudo-substrates. " The specific formation outgrowth of this quintuple-layered ingredient in MBE is investigated, from which the Van der Waals epitaxy growth characteristics inherent to unfrocking of Bi2Se3 is determined, and the mechanism of the "two-step growth" technique for this ingredient is further clarified. Among the various substrates, those that are inert to concatenation of events with Bi/Se are important for the growth. The epilayers' lattice-loser with the substrate is also a crucial factor to the structural quality of the Bi2Se3 epifilms, such as the glitches density and the single-crystalline territory size. The effect of a vicinal substrate on suppressing the twin-glitches in photograph is also addressed. Using a suitable substrate and adapting an excellent condition, ultra-thin films of Bi2Se3 with a superior structural quality have been achieved. Multilayered Bi2Se3 constructions with ZnSe and In2Se3 spacers are attempted. Finally the high-quality superlattices of Bi2Se3/In2Se3 are successfully synthesized. The hetero-interfaces in the superlattice structure of Bi2Se3/In2Se3 are sharp, and the individual layers are uniform with dimensions being strictly controlled. The conducts of tension transformation during the hetero-growth outgrowth are finally investigated. An wanton requiescence of loser tension is observed. And the interaction between the residual tension and the opening surface in the initial growth stage is also identified. DOI: 10. 5353/th_b4716348 Points: Jar alloysIndium alloysBismuth compoundsSelenium compoundsThin filmsHeterostructuresMolecular beam epitaxy.

MBE Growth of Alinn and Bi2se3 Thin Films and Hetero-Structures read online or download

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  • Publisher: Open Dissertation Press
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  • Cover: Hardcover
  • Language: English
  • ISBN-10: 1361285338
  • ISBN-13: 978-1361285336
  • Dimensions: 8.5 x 0.5 x 11 inches
  • Weight: 1.7 pounds
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  • Price: $59.00

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